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Title
Loss Measurement of Low RDS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On
Research Group
Almacenamiento de energíaSistemas electrónicos de potencia aplicados al control de la energía eléctrica
xmlui.dri2xhtml.METS-1.0.item-contributorOtherinstitution
https://ror.org/012a91z28https://ror.org/005kw6t15
Version
http://purl.org/coar/version/c_ab4af688f83e57aa
Rights
© 2023 IEEE and EPE AssociationAccess
http://purl.org/coar/access_right/c_abf2Publisher’s version
https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264432Publisher
IEEEKeywords
Device characterization
Power losses
Switching and conduction losses
Junction temperature ... [+]
Power losses
Switching and conduction losses
Junction temperature ... [+]
Device characterization
Power losses
Switching and conduction losses
Junction temperature
MOSFET [-]
Power losses
Switching and conduction losses
Junction temperature
MOSFET [-]
Abstract
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of t ... [+]
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is based on the transistor current regulation with low gate voltages and the linearity between power and temperature, being useful for all transistor technologies (Si, SiC and GaN). Through this method, low DC currents are enough to bring transistors to their thermal limits. Thermal stability issues and their differences between technologies are discussed and an experimental validation of the method is carried out. [-]
