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Experimental Dynamic Saturation Current Evaluation of 650V GaN GITs
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https://ror.org/00wvqgd19https://ror.org/03msng824
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2145-12-31Hizkuntza
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© 2025 VDE VerlagSarbidea
Sarbide bahituaArgitaratzailearen bertsioa
https://doi.org/10.30420/566541207Non argitaratua
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Nuremberg (Germany), 06-08 May, 2025Argitaratzailea
VDE VerlagGako-hitzak
ODS 7 Energía asequible y no contaminanteODS 9 Industria, innovación e infraestructura
ODS 13 Acción por el clima
Gaia (UNESCO Tesauroa)
http://vocabularies.unesco.org/thesaurus/concept621Laburpena
This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show ... [+]
This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show that the saturation current (iD-sat) of first-generation GIT devices can exceed datasheet values by 50 % when the turn-on current is kept below 80 % of the recommended iD-pulse. This makes GaN GITs suitable for a wider range of applications, particularly where transient high peak currents are expected under soft-switching or zero-current-switching conditions. Furthermore, the new generation of GIT technology demonstrates 8 to 15 % higher iD-sat compared to the previous generation for the same gate current. [-]
