Experimental Dynamic Saturation Current Evaluation of 650V GaN GITs

Abstract

This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show that the saturation current (iD-sat) of first-generation GIT devices can exceed datasheet values by 50 % when the turn-on current is kept below 80 % of the recommended iD-pulse. This makes GaN GITs suitable for a wider range of applications, particularly where transient high peak currents are expected under soft-switching or zero-current-switching conditions. Furthermore, the new generation of GIT technology demonstrates 8 to 15 % higher iD-sat compared to the previous generation for the same gate current.