Título
Simple and Affordable Method for Fast Transient Measurements of SiC DevicesGrupo de investigación
Sistemas electrónicos de potencia aplicados al control de la energía eléctricaAccionamientos aplicados a la tracción y a la generación de energía eléctrica
Versión
Postprint
Derechos
© 2020 IEEEAcceso
Acceso abiertoVersión del editor
https://doi.org/10.1109/TPEL.2019.2924358Publicado en
IEEE Transactions on Power Electronics Vol. 35. N. 3. Pp. 2933-2942. March, 2020Editor
IEEEPalabras clave
SiC
MOSFET
measurement
Fast switching ... [+]
MOSFET
measurement
Fast switching ... [+]
SiC
MOSFET
measurement
Fast switching
voltage probes
current probes
high frequency
ODS 7 Energía asequible y no contaminante
ODS 9 Industria, innovación e infraestructura [-]
MOSFET
measurement
Fast switching
voltage probes
current probes
high frequency
ODS 7 Energía asequible y no contaminante
ODS 9 Industria, innovación e infraestructura [-]
Resumen
The measurement of fast voltage and current transients of Silicon Carbide (SiC) devices requires high bandwidth (BW) probes. Commercially available voltage and current probes can be expensive, and, in ... [+]
The measurement of fast voltage and current transients of Silicon Carbide (SiC) devices requires high bandwidth (BW) probes. Commercially available voltage and current probes can be expensive, and, in addition, the delay introduced by them must be compensated to achieve a proper time alignment (de-skew). Determining this de-skewing value is not a trivial task. In this paper, a simple and affordable measurement method is presented for the simultaneous measurement of the voltage and current transients of SiC devices. The voltage is measured by means of a high BW RC attenuator, while the current is estimated from the voltage drop in the stray inductance of the switching loop. Since both voltages are measured with two equal and matched high BW passive voltage probes, there is no need to apply any de-skew. This is one of the most important advantages of the method. The presented method is experimentally evaluated and used for the estimation of energy switching losses in the tested SiC-mosfet. [-]
Financiador
Gobierno VascoGobierno Vasco
Programa
Elkartek 2018Programa Universidad-Empresa
Número
KK-2018-00064UE2017-09
URI de la ayuda
Sin informaciónSin información
Proyecto
Silicon Carbide Solutions (SICSOL)Inversor ultracompacto de alta eficiencia basado en semiconductores de banda ancha (EFINVERTER)
Colecciones
- Artículos - Ingeniería [684]