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dc.contributor.authorArrizabalaga, Antxon
dc.contributor.authorMazuela, Mikel
dc.contributor.authorAizpuru, Iosu
dc.contributor.authorUrkizu, June
dc.contributor.authorAztiria, Jon
dc.date.accessioned2022-12-06T10:40:28Z
dc.date.available2022-12-06T10:40:28Z
dc.date.issued2022
dc.identifier.isbn978-9-0758-1539-9en
dc.identifier.otherhttps://katalogoa.mondragon.edu/janium-bin/janium_login_opac.pl?find&ficha_no=170387en
dc.identifier.urihttps://hdl.handle.net/20.500.11984/5903
dc.description.abstractSiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the system is built and tested, showing the efficiency improvements achieved with SiC. Finally, a theoretical system level converter optimization is done applying the experimental results.en
dc.language.isoengen
dc.publisherIEEEen
dc.rights© 2022 IEEEen
dc.subjectInsulated gate bipolar transistorsen
dc.subjectMOSFETen
dc.subjectSilicon carbideen
dc.subjectSwitching frequencyen
dc.subjectprototypesen
dc.subjectSwitchesen
dc.subjectSiliconen
dc.titleBenefits of switching from Si to SiC modules with further converter optimizationen
dcterms.accessRightshttp://purl.org/coar/access_right/c_f1cfen
dcterms.source2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)en
local.contributor.groupSistemas electrónicos de potencia aplicados al control de la energía eléctricaes
local.description.peerreviewedtrueen
local.identifier.doihttps://ieeexplore.ieee.org/document/9907424en
local.embargo.enddate2024-10-31
local.source.detailsHanover, 5-9 septiembre, 2022en
oaire.format.mimetypeapplication/pdf
oaire.file$DSPACE\assetstore
oaire.resourceTypehttp://purl.org/coar/resource_type/c_c94fen
oaire.versionhttp://purl.org/coar/version/c_ab4af688f83e57aaen


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