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Title
Benefits of switching from Si to SiC modules with further converter optimization
Author
Research Group
Sistemas electrónicos de potencia aplicados al control de la energía eléctrica
Version
http://purl.org/coar/version/c_ab4af688f83e57aa
Rights
© 2022 IEEE
Access
http://purl.org/coar/access_right/c_f1cf
URI
https://hdl.handle.net/20.500.11984/5903
Publisher’s version
Published at
2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)  Hanover, 5-9 septiembre, 2022
Publisher
IEEE
Keywords
Insulated gate bipolar transistors
MOSFET
Silicon carbide
Switching frequency ... [+]
Insulated gate bipolar transistors
MOSFET
Silicon carbide
Switching frequency
prototypes
Switches
Silicon [-]
Abstract
SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the ... [+]
SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the system is built and tested, showing the efficiency improvements achieved with SiC. Finally, a theoretical system level converter optimization is done applying the experimental results. [-]
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