Bilatu
4-tik 1-4 emaitza erakusten
EMI prediction based on datasheet parameters for hard-switched Si, SiC, and GaN MOSFETs
(IEEE, 2025)
Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) enable improved power converter efficiency due to better material characteristics. However, their faster switching dynamics introduce ...
Comparative Analysis of TSD and NTC-Based Temperature Measurement for Power Semiconductor Modules
(IEEE, 2025)
Accurate temperature estimation is essential for ensuring the reliability and performance of power semiconductor devices. This paper presents various techniques used in the industry and focuses on a comparative analysis ...
Uncertainty Assessment Framework for IGBT Lifetime Models. A Case Study of Solder-Free Modules
(PHM Society, 2024)
Insulated gate bipolar transistors (IGBTs) are ubiquitous semiconductor devices used in diverse electronic power applications. The reliability and lifetime assessment of IGBTs is intricate and influenced by different ageing ...
Simple and Affordable Method for Fast Transient Measurements of SiC Devices
(IEEE, 2020)
The measurement of fast voltage and current transients of Silicon Carbide (SiC) devices requires high bandwidth (BW) probes. Commercially available voltage and current probes can be expensive, and, in addition, the delay ...
