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Title
Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs
xmlui.dri2xhtml.METS-1.0.item-contributorOtherinstitution
https://ror.org/012a91z28Version
http://purl.org/coar/version/c_ab4af688f83e57aa
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© 2022 IEEEAccess
http://purl.org/coar/access_right/c_f1cfxmlui.dri2xhtml.METS-1.0.item-identifier
https://ieeexplore.ieee.org/document/9907145Published at
24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) Hanover, 5-9 septiembre, 2022Publisher
IEEEKeywords
Semiconductor device modeling
Temperature sensors
Thermal resistance
Surface resistance ... [+]
Temperature sensors
Thermal resistance
Surface resistance ... [+]
Semiconductor device modeling
Temperature sensors
Thermal resistance
Surface resistance
surface roughness
Thermal analysis
Rough surfaces [-]
Temperature sensors
Thermal resistance
Surface resistance
surface roughness
Thermal analysis
Rough surfaces [-]
Abstract
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-top capsule surface. By placing the transistor in a vertical position, without being soldered to any P ... [+]
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-top capsule surface. By placing the transistor in a vertical position, without being soldered to any PCB, and sensing the dissipated power and the temperatures of the device, it is possible to characterize the internal thermal resistance. [-]
