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Integration of Silicon Carbide devices to increase the AEP (Annual Energy Production) in a PM based wind generation system.pdf (953.2Kb)
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Title
Integration of Silicon Carbide devices to increase the AEP (Annual Energy Production) in a PM based wind generation system
Author
Arrizabalaga, Antxon
Mazuela, Mikel
Idarreta Garate, Aitor
IRAOLA, UNAI
Aizpuru, Iosu
Author (from another institution)
Rodríguez, José Luis
Labiano Andueza, Daniel
Alişar, İbrahim
Research Group
Almacenamiento de energía
Other institutions
https://ror.org/02jfvys57
SGRE Innovation & Technology S.L.
Version
Postprint
Rights
© 2020 IEEE
Access
Open access
URI
https://hdl.handle.net/20.500.11984/6778
Publisher’s version
https://doi.org/10.1109/PEDG48541.2020.9244477
Published at
IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)  11. Dubrovnik, Croatia (online). 28 septiembre-1 octubre, 2020.
Publisher
IEEE
Keywords
wind energy
Abstract
A radical energetic change is needed nowadays and enhancing renewable energies should play a main role. For its superior performance and lower losses, SiC devices are identified as a potential technol ... [+]
A radical energetic change is needed nowadays and enhancing renewable energies should play a main role. For its superior performance and lower losses, SiC devices are identified as a potential technology to improve wind energy generation systems AEP. A 2 MW PM generator based WGS (Wind Generation System) is modeled, and Si IGBT, hybrid and full SiC MOSFET devices are tested in different operation points, as well as different locations. Higher efficiency in the converter based on SiC MOSFETs is observed in all the operation points. This leads to an increment in AEP, mostly in regions with lower average annual wind speeds, making them more interesting for wind energy. The work is replicable tuning the simulation models to obtain precise results for an exact WGS. [-]
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