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Silicon Application Extension Versus WBG Due to Partial Power Processing [Final paper].pdf (433.4Kb)
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Title
Silicon Application Extension Versus WBG Due to Partial Power Processing
Author
Anzola, Jon
Aizpuru, Iosu
Author (from another institution)
Sharma, Shrivatsal
Bhattacharya, Subhashish
Research Group
Almacenamiento de energía
Other institutions
North Carolina State University
Version
Postprint
Rights
© 2022 IEEE
Access
Embargoed access
URI
https://hdl.handle.net/20.500.11984/5836
Publisher’s version
https://doi.org/10.1109/APEC43599.2022.9773605
Published at
2022 IEEE Applied Power Electronics Conference and Exposition (APEC) 
Publisher
IEEE
Keywords
Resistance
Energy loss
Costs
Silicon carbide ... [+]
Resistance
Energy loss
Costs
Silicon carbide
Switching loss
Voltage
Switches [-]
Abstract
This paper discusses the new possibilities that partial power processing offers to implement silicon semiconductors compared to wide-bandgap technologies. With this purpose, an on-board charger applic ... [+]
This paper discusses the new possibilities that partial power processing offers to implement silicon semiconductors compared to wide-bandgap technologies. With this purpose, an on-board charger application is presented as a case study in which wide-bandgap semiconductors based full power converters are compared with silicon semiconductors based partial power converters. The comparison is made using the total energy loss over a complete charge cycle. The total energy loss is calculated using the switching loss and conduction loss of the devices. The zero-voltage switching regions for both full power and partial power topologies are also considered while calculating switching losses. Using circuit simulations, it is concluded that the partial power processing converters with silicon based devices have better efficiency and reduced cost than full power converters with wide-bandgap based devices. [-]
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