Título
Medium voltage-high power converter topologies comparison procedure for a 6.6kV Drive Application using 4.5kV IGBT ModulesOtras instituciones
Ingeteam (Spain)Versión
Postprint
Derechos
© 2012 IEEEAcceso
Acceso abiertoVersión del editor
https://doi.org/10.1109/TIE.2011.2162213Publicado en
IEEE Transactions on Industrial Electronics Vol. 59, N°3. Pp. 1462-1476, 2012Primera página
1462Última página
1476Editor
IEEEPalabras clave
Topology
Switching frequency
Insulated gate bipolar transistors
Semiconductor device modeling ... [+]
Switching frequency
Insulated gate bipolar transistors
Semiconductor device modeling ... [+]
Topology
Switching frequency
Insulated gate bipolar transistors
Semiconductor device modeling
Junctions
Modulation
Load modeling [-]
Switching frequency
Insulated gate bipolar transistors
Semiconductor device modeling
Junctions
Modulation
Load modeling [-]
Resumen
This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the ... [+]
This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the converters output characteristics such as the output voltage, current, active power, efficiency, etc. Afterwards, the general procedure is applied to compare some of the most relevant converter topologies oriented to a 6.6 kV drive application supplying quadratic torque loads and using 4.5 kV IGBT modules. The paper concludes evaluating the comparison factors of the different converter topologies and selected semiconductors obtained by the proposed procedure. The proposed procedure can potentially be extrapolated to any desired application framework. [-]
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