Zerrendatu Artikuluak-Ingeniaritza honen arabera: gaia "09bbdc84-b0e1-4cdb-b95f-8f29be9505d9"

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    • High-Frequency Modelling of Electrical Machines for EMC Analysis 

      Moreno, Yerai; Egea, Aritz; Almandoz, Gaizka; Ugalde, Gaizka (MDPI, 2024)
      The trend towards electrification in mobility has led to the increased use of silicon carbide (SiC) semiconductors. These semiconductors are more efficient but also present challenges related to electromagnetic interference ...

    • Simple and Affordable Method for Fast Transient Measurements of SiC Devices 

      Garrido, David; Baraia-Etxaburu, Igor; Arza Alonso, Joseba; Barrenetxea, Manex (IEEE, 2020)
      The measurement of fast voltage and current transients of Silicon Carbide (SiC) devices requires high bandwidth (BW) probes. Commercially available voltage and current probes can be expensive, and, in addition, the delay ...