Zerrendatu honen arabera: egilea "8935fd8cacd60bcb2461d2445fd7f591"

15-tik 1-15 emaitza erakusten

    • Comparative Analysis of TSD and NTC-Based Temperature Measurement for Power Semiconductor Modules 

      Agirrezabala, Eneko; Portillo Cancho, Ane; Lajas Garcia, Miguel; Aizpuru, Iosu; Garrido, David (IEEE, 2025)
      Accurate temperature estimation is essential for ensuring the reliability and performance of power semiconductor devices. This paper presents various techniques used in the industry and focuses on a comparative analysis ...

    • EMI prediction based on datasheet parameters for hard-switched Si, SiC, and GaN MOSFETs 

      Aranguren Deriozpide, Jon; Barrutia, Iban; Garrido, David; Aizpuru, Iosu (IEEE, 2025)
      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) enable improved power converter efficiency due to better material characteristics. However, their faster switching dynamics introduce ...

    • Enhancing Overload Capability of Electric Truck Inverters via Active Thermal Control 

      Agirrezabala, Eneko; Pascal, Yoann; Debbadi, Karthik; Liserre, Marco; Aizpuru, Iosu; Garrido, David (IEEE, 2026)
      Electric trucks are subject to demanding overload events during operations such as kerbstone climbing, where the inverter operates at low output frequency and high current, leading to significant thermal stress on power ...

    • An Experimentally Verified Behavioral GaN HD-GIT Transistor Model 

      Udabe Zabala, Ander; Baraia-Etxaburu, Igor; Garrido, David (IEEE, 2025)
      GaN HEMT transistors, with their superior on-resistance and switching times, provide a promising alternative to Si and SiC devices. Commercially available normally OFF GaN transistors can be categorized into two main groups: ...

    • Fundamentos básicos del acoplamiento inductivo y rol de los condensadores de desacoplo 

      Baraia-Etxaburu, Igor; Garrido, David (Federación de Asociaciones de Ingenieros Industriales de España, 2022)
      El acoplamiento electromagnético es el mecanismo con el que un circuito induce ruido o interferencia en otro circuito adyacente. Este mecanismo de acople genera Interferencias Electromagnéticas que degradan o incluso ...

    • Gallium Nitride Power Devices: A State of the Art Review 

      Udabe Zabala, Ander; Baraia-Etxaburu, Igor; Garrido, David (IEEE, 2023)
      Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with ...

    • Impact of Gallium Nitride Devices in Real Power Electronics Applications 

      Udabe Zabala, Ander (Mondragon Unibertsitatea. Goi Eskola Politeknikoa, 2024)
      Power converters traditionally use Silicon (Si) transistors and diodes for the conversion and control of electrical energy. Decades of refinement of manufacturing processes have led to the production of Silicon with ...

    • Impacto de los semiconductores de banda prohibida ancha en el diseño de convertidores de potencia 

      Garrido, David (Mondragon Unibertsitatea. Goi Eskola Politeknikoa, 2020)
      Los convertidores electrónicos de potencia se basan en dispositivos semiconductores para la conversión y control de la energía eléctrica. El silicio es a día de hoy el material más ampliamente utilizado para la construcción ...

    • Optimising Power Semiconductor Thermal Simulation via Finite Element Modeling 

      Agirrezabala, Eneko; Oca, Laura; Aizpuru, Iosu; Garrido, David; Baraia-Etxaburu Zubiaurre, Igor (IEEE, 2025)
      This article presents a Finite Element Modeling (FEM) framework for thermal analysis of power semiconductor modules, combining simulation accuracy with enhanced computational efficiency. Power losses are calculated using ...

    • Review of Wide Bandgap Materials and their Impact in New Power Devices 

      Garrido, David; Baraia-Etxaburu, Igor (IEEE, 2017)
      Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the ...

    • Simple and Affordable Method for Fast Transient Measurements of SiC Devices 

      Garrido, David; Baraia-Etxaburu, Igor; Arza Alonso, Joseba; Barrenetxea, Manex (IEEE, 2020)
      The measurement of fast voltage and current transients of Silicon Carbide (SiC) devices requires high bandwidth (BW) probes. Commercially available voltage and current probes can be expensive, and, in addition, the delay ...

    • Static Current Unbalance of Paralleled SiC MOSFET Modules in the Final Layout 

      Garrido, David; Baraia-Etxaburu, Igor (IEEE, 2020)
      Silicon Carbide (SiC) MOSFETs enable enhanced performance of power converters in several applications. Parallel connection of SiC MOSFETs become mandatory for medium power applications due to the current rate of existing ...

    • Steady-state temperature calculation tool for multilayer PCBs 

      Gezala Rodero, Haitz; Garrido, David; Baraia-Etxaburu Zubiaurre, Igor; Aizpuru, Iosu; Paniagua Amillano, Julen (IEEE, 2025)
      The adoption of GaN-based devices in power converters offers significant improvements in efficiency and power density, but also intensifies thermal challenges by concentrating heat in smaller volumes. High current and ...

    • Time saving analytical modelling and design of PCBS with through-hole and blind thermal vias 

      Gezala Rodero, Haitz; Garrido, David; Baraia-Etxaburu Zubiaurre, Igor; Aizpuru, Iosu (IET, 2025)
      High-power-density converters concentrate heat in smaller areas of printed circuit boards (PCBs), a challenge exacerbated by Gallium Nitride (GaN)-based components in surface-mount device (SMD) packages. While these ...

    • Uncertainty Assessment Framework for IGBT Lifetime Models. A Case Study of Solder-Free Modules 

      Zubizarreta, Ander; Penalba, Markel; Garrido, David; Markina, Unai; Ibarrola, Xabier; Aizpurua, Jose I. (PHM Society, 2024)
      Insulated gate bipolar transistors (IGBTs) are ubiquitous semiconductor devices used in diverse electronic power applications. The reliability and lifetime assessment of IGBTs is intricate and influenced by different ageing ...