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Title
Integration of Silicon Carbide devices to increase the AEP (Annual Energy Production) in a PM based wind generation system
xmlui.dri2xhtml.METS-1.0.item-contributorOtherinstitution
https://ror.org/02jfvys57SGRE Innovation & Technology S.L.
Version
http://purl.org/coar/version/c_ab4af688f83e57aa
Rights
© 2020 IEEEAccess
http://purl.org/coar/access_right/c_abf2Publisher’s version
https://doi.org/10.1109/PEDG48541.2020.9244477Published at
IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) 11. Dubrovnik, Croatia (online). 28 septiembre-1 octubre, 2020.Publisher
IEEEKeywords
wind energyAbstract
A radical energetic change is needed nowadays and enhancing renewable energies should play a main role. For its superior performance and lower losses, SiC devices are identified as a potential technol ... [+]
A radical energetic change is needed nowadays and enhancing renewable energies should play a main role. For its superior performance and lower losses, SiC devices are identified as a potential technology to improve wind energy generation systems AEP. A 2 MW PM generator based WGS (Wind Generation System) is modeled, and Si IGBT, hybrid and full SiC MOSFET devices are tested in different operation points, as well as different locations. Higher efficiency in the converter based on SiC MOSFETs is observed in all the operation points. This leads to an increment in AEP, mostly in regions with lower average annual wind speeds, making them more interesting for wind energy. The work is replicable tuning the simulation models to obtain precise results for an exact WGS. [-]
