GaN Based Multiphasic Drive for Electric Vehicles

Abstract

This paper presents the design of a six-phase two-level Voltage Source Inverter (VSI) using Gallium Nitride (GaN) semiconductors. The proposed topology consists of three full-bridge branches, where the GaN semiconductors can be interchanged with other semiconductor technologies. This allows for a fair comparison, as the layout and driver circuitry remain the same. A prototype has been developed to validate the use of GaN devices in motor drive systems for traction applications, and to evaluate the advantages of multiphase system.