Título
Benefits of switching from Si to SiC modules with further converter optimizationGrupo de investigación
Sistemas electrónicos de potencia aplicados al control de la energía eléctricaVersión
Postprint
Derechos
© 2022 IEEEAcceso
Acceso embargadoVersión del editor
https://ieeexplore.ieee.org/document/9907424Publicado en
2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) Hanover, 5-9 septiembre, 2022Editor
IEEEPalabras clave
Insulated gate bipolar transistors
MOSFET
Silicon carbide
Switching frequency ... [+]
MOSFET
Silicon carbide
Switching frequency ... [+]
Insulated gate bipolar transistors
MOSFET
Silicon carbide
Switching frequency
prototypes
Switches
Silicon [-]
MOSFET
Silicon carbide
Switching frequency
prototypes
Switches
Silicon [-]
Resumen
SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the ... [+]
SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the system is built and tested, showing the efficiency improvements achieved with SiC. Finally, a theoretical system level converter optimization is done applying the experimental results. [-]
Colecciones
- Congresos - Ingeniería [376]