2026-04-22T04:54:27Zhttps://ebiltegia.mondragon.edu/oai/request

oai:ebiltegia.mondragon.edu:20.500.11984/65752024-07-10T06:15:31Zcom_20.500.11984_1143col_20.500.11984_1148

Review of Wide Bandgap Materials and their Impact in New Power Devices Garrido, David Baraia-Etxaburu, Igor wide bandgap semiconductor SiC GaN power devices ODS 7 Energía asequible y no contaminante ODS 9 Industria, innovación e infraestructura Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the limits of Si are being reached and in consequence, Si based semiconductors have limited voltage blocking capability, limited heat transfer capability, limited efficiency and maximum junction temperature. In recent years, power semiconductor devices have been built with wide-bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). The use of these materials promises to surpass the limits imposed by Si. More compact and efficient devices can be fabricated with these materials. However, in order to exploit the benefits of these devices, is necessary to know all the implications that the adoption of these new components has in the converter. This paper provides a review of current SiC and GaN materials and devices comparing their benefits and drawbacks for real power applications. 2024-07-09T09:05:46Z 2024-07-09T09:05:46Z 2017 http://purl.org/coar/resource_type/c_c94f 978-1-5090-5582-1 https://katalogoa.mondragon.edu/janium-bin/janium_login_opac.pl?find&ficha_no=152365 https://hdl.handle.net/20.500.11984/6575 eng © 2017 IEEE IEEE