2026-04-23T06:05:05Zhttps://ebiltegia.mondragon.edu/oai/request

oai:ebiltegia.mondragon.edu:20.500.11984/65742024-09-26T13:58:41Zcom_20.500.11984_473col_20.500.11984_478

00925njm 22002777a 4500 dc Garrido, David author Baraia-Etxaburu, Igor author Arza Alonso, Joseba author Barrenetxea, Manex author 2020 The measurement of fast voltage and current transients of Silicon Carbide (SiC) devices requires high bandwidth (BW) probes. Commercially available voltage and current probes can be expensive, and, in addition, the delay introduced by them must be compensated to achieve a proper time alignment (de-skew). Determining this de-skewing value is not a trivial task. In this paper, a simple and affordable measurement method is presented for the simultaneous measurement of the voltage and current transients of SiC devices. The voltage is measured by means of a high BW RC attenuator, while the current is estimated from the voltage drop in the stray inductance of the switching loop. Since both voltages are measured with two equal and matched high BW passive voltage probes, there is no need to apply any de-skew. This is one of the most important advantages of the method. The presented method is experimentally evaluated and used for the estimation of energy switching losses in the tested SiC-mosfet. 1941-0107 https://katalogoa.mondragon.edu/janium-bin/janium_login_opac.pl?find&ficha_no=152269 https://hdl.handle.net/20.500.11984/6574 SiC MOSFET measurement Fast switching voltage probes current probes high frequency ODS 7 Energía asequible y no contaminante ODS 9 Industria, innovación e infraestructura Simple and Affordable Method for Fast Transient Measurements of SiC Devices