2026-04-23T06:05:11Zhttps://ebiltegia.mondragon.edu/oai/request

oai:ebiltegia.mondragon.edu:20.500.11984/64522024-06-05T06:15:28Zcom_20.500.11984_1143col_20.500.11984_1148

Almandoz, Gaizka 2024-06-04T07:08:47Z 2024-06-04T07:08:47Z 2023 978-3-8007-6091-6 https://katalogoa.mondragon.edu/janium-bin/janium_login_opac.pl?find&ficha_no=176534 https://hdl.handle.net/20.500.11984/6452 This paper presents the design of a six-phase two-level Voltage Source Inverter (VSI) using Gallium Nitride (GaN) semiconductors. The proposed topology consists of three full-bridge branches, where the GaN semiconductors can be interchanged with other semiconductor technologies. This allows for a fair comparison, as the layout and driver circuitry remain the same. A prototype has been developed to validate the use of GaN devices in motor drive systems for traction applications, and to evaluate the advantages of multiphase system. eng © 2023 Mesago Messe Frankfurt GmbH ODS 7 Energía asequible y no contaminante ODS 9 Industria, innovación e infraestructura GaN Based Multiphasic Drive for Electric Vehicles http://purl.org/coar/resource_type/c_c94f