2026-04-07T17:02:22Zhttps://ebiltegia.mondragon.edu/oai/request

oai:ebiltegia.mondragon.edu:20.500.11984/59032024-03-04T09:44:08Zcom_20.500.11984_1143col_20.500.11984_1148

Arrizabalaga, Antxon Mazuela, Mikel Aizpuru, Iosu Urkizu, June Aztiria, Jon 2022-12-06T10:40:28Z 2022-12-06T10:40:28Z 2022 978-9-0758-1539-9 https://katalogoa.mondragon.edu/janium-bin/janium_login_opac.pl?find&ficha_no=170387 https://hdl.handle.net/20.500.11984/5903 SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the system is built and tested, showing the efficiency improvements achieved with SiC. Finally, a theoretical system level converter optimization is done applying the experimental results. eng © 2022 IEEE Insulated gate bipolar transistors MOSFET Silicon carbide Switching frequency prototypes Switches Silicon Benefits of switching from Si to SiC modules with further converter optimization http://purl.org/coar/resource_type/c_c94f