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oai:ebiltegia.mondragon.edu:20.500.11984/59032024-03-04T09:44:08Zcom_20.500.11984_1143col_20.500.11984_1148

00925njm 22002777a 4500 dc Arrizabalaga, Antxon author Mazuela, Mikel author Aizpuru, Iosu author Urkizu, June author Aztiria, Jon author 2022 SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the system is built and tested, showing the efficiency improvements achieved with SiC. Finally, a theoretical system level converter optimization is done applying the experimental results. 978-9-0758-1539-9 https://katalogoa.mondragon.edu/janium-bin/janium_login_opac.pl?find&ficha_no=170387 https://hdl.handle.net/20.500.11984/5903 Insulated gate bipolar transistors MOSFET Silicon carbide Switching frequency prototypes Switches Silicon Benefits of switching from Si to SiC modules with further converter optimization