2026-04-07T12:28:02Zhttps://ebiltegia.mondragon.edu/oai/request

oai:ebiltegia.mondragon.edu:20.500.11984/139872026-01-29T08:38:10Zcom_20.500.11984_1143col_20.500.11984_1148

Alberdi Esuain, Borja Mazuela, Mikel Azurza, Jon Ostermaier, Clemens San Sebastian, Jon Sanchez, Roberto 2025-11-21T07:24:07Z 2025-11-21T07:24:07Z 2025 9783800765416 2191-3358 https://doi.org/10.30420/566541207 https://hdl.handle.net/20.500.11984/13987 This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show that the saturation current (iD-sat) of first-generation GIT devices can exceed datasheet values by 50 % when the turn-on current is kept below 80 % of the recommended iD-pulse. This makes GaN GITs suitable for a wider range of applications, particularly where transient high peak currents are expected under soft-switching or zero-current-switching conditions. Furthermore, the new generation of GIT technology demonstrates 8 to 15 % higher iD-sat compared to the previous generation for the same gate current. eng © 2025 VDE Verlag ODS 7 Energía asequible y no contaminante ODS 9 Industria, innovación e infraestructura ODS 13 Acción por el clima Experimental Dynamic Saturation Current Evaluation of 650V GaN GITs