2026-04-07T12:29:16Zhttps://ebiltegia.mondragon.edu/oai/request

oai:ebiltegia.mondragon.edu:20.500.11984/139872026-01-29T08:38:10Zcom_20.500.11984_1143col_20.500.11984_1148

00925njm 22002777a 4500 dc Alberdi Esuain, Borja author Mazuela, Mikel author Azurza, Jon author Ostermaier, Clemens author San Sebastian, Jon author Sanchez, Roberto author 2025 This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show that the saturation current (iD-sat) of first-generation GIT devices can exceed datasheet values by 50 % when the turn-on current is kept below 80 % of the recommended iD-pulse. This makes GaN GITs suitable for a wider range of applications, particularly where transient high peak currents are expected under soft-switching or zero-current-switching conditions. Furthermore, the new generation of GIT technology demonstrates 8 to 15 % higher iD-sat compared to the previous generation for the same gate current. 9783800765416 2191-3358 https://doi.org/10.30420/566541207 https://hdl.handle.net/20.500.11984/13987 ODS 7 Energía asequible y no contaminante ODS 9 Industria, innovación e infraestructura ODS 13 Acción por el clima Experimental Dynamic Saturation Current Evaluation of 650V GaN GITs