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Título
Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs
Autor-a
Autor-a (de otra institución)
Grupo de investigación
Almacenamiento de energía
Otras instituciones
Universidad de Zaragoza
Versión
Postprint
Derechos
© 2022 IEEE
Acceso
Acceso embargado
URI
https://hdl.handle.net/20.500.11984/5914
Identificador
https://ieeexplore.ieee.org/document/9907145
Publicado en
24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)  Hanover, 5-9 septiembre, 2022
Editor
IEEE
Palabras clave
Semiconductor device modeling
Temperature sensors
Thermal resistance
Surface resistance ... [+]
Semiconductor device modeling
Temperature sensors
Thermal resistance
Surface resistance
surface roughness
Thermal analysis
Rough surfaces [-]
Resumen
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-top capsule surface. By placing the transistor in a vertical position, without being soldered to any P ... [+]
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-top capsule surface. By placing the transistor in a vertical position, without being soldered to any PCB, and sensing the dissipated power and the temperatures of the device, it is possible to characterize the internal thermal resistance. [-]
Sponsorship
Gobierno Vasco-Eusko Jaurlaritza
ID Proyecto
info:eu-repo/grantAgreement/GV/Elkartek 2021/KK-2021-00044/CAPV/Vehículo eléctrico basado en Nitruro de Galio/VEGAN
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