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Título
Experimental Dynamic Saturation Current Evaluation of 650V GaN GITs
Fecha de publicación
2025Grupo de investigación
Accionamientos aplicados a la tracción y a la generación de energía eléctricaOtras instituciones
https://ror.org/00wvqgd19https://ror.org/03msng824
Ikerlan
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Versión
PostprintTipo de documento
Contribución a congresoIdioma
InglésDerechos
© 2025 VDE VerlagAcceso
Acceso embargadoFin de la fecha de embargo
2145-12-31Versión de la editorial
https://doi.org/10.30420/566541207Publicado en
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Nuremberg (Germany), 06-08 May, 2025Editorial
VDE VerlagPalabras clave
ODS 7 Energía asequible y no contaminanteODS 9 Industria, innovación e infraestructura
ODS 13 Acción por el clima
Resumen
This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show ... [+]
This study investigates the dynamic behavior of the saturation current in 650 V Gallium Nitride (GaN) Gate Injection Transistors (GIT), a key parameter for power electronics. Experimental results show that the saturation current (iD-sat) of first-generation GIT devices can exceed datasheet values by 50 % when the turn-on current is kept below 80 % of the recommended iD-pulse. This makes GaN GITs suitable for a wider range of applications, particularly where transient high peak currents are expected under soft-switching or zero-current-switching conditions. Furthermore, the new generation of GIT technology demonstrates 8 to 15 % higher iD-sat compared to the previous generation for the same gate current. [-]
