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Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs.pdf (3.223Mb)
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Title
Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs
Author
Arruti Romero, Asier
Aizpuru, Iosu
Author (from another institution)
Sanz-Alcaine, José Miguel
Pérez-Cebolla, Francisco José
Bernal Ruiz, Carlos
Research Group
Almacenamiento de energía
Other institutions
Universidad de Zaragoza
Version
Postprint
Rights
© 2022 IEEE
Access
Embargoed access
URI
https://hdl.handle.net/20.500.11984/5914
xmlui.dri2xhtml.METS-1.0.item-identifier
https://ieeexplore.ieee.org/document/9907145
Published at
24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)  Hanover, 5-9 septiembre, 2022
Publisher
IEEE
Keywords
Semiconductor device modeling
Temperature sensors
Thermal resistance
Surface resistance ... [+]
Semiconductor device modeling
Temperature sensors
Thermal resistance
Surface resistance
surface roughness
Thermal analysis
Rough surfaces [-]
Abstract
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-top capsule surface. By placing the transistor in a vertical position, without being soldered to any P ... [+]
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-top capsule surface. By placing the transistor in a vertical position, without being soldered to any PCB, and sensing the dissipated power and the temperatures of the device, it is possible to characterize the internal thermal resistance. [-]
xmlui.dri2xhtml.METS-1.0.item-sponsorship
Gobierno Vasco-Eusko Jaurlaritza
xmlui.dri2xhtml.METS-1.0.item-projectID
info:eu-repo/grantAgreement/GV/Elkartek 2021/KK-2021-00044/CAPV/Vehículo eléctrico basado en Nitruro de Galio/VEGAN
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  • Conferences - Engineering [423]

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