
Título
Benefits of switching from Si to SiC modules with further converter optimizationFecha de publicación
2022Grupo de investigación
Sistemas electrónicos de potencia aplicados al control de la energía eléctricaVersión
PostprintTipo de documento
Contribución a congresoContribución a congresoIdioma
engDerechos
© 2022 IEEEAcceso
Acceso embargadoFin de la fecha de embargo
2024-10-31Versión de la editorial
https://ieeexplore.ieee.org/document/9907424Publicado en
2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) Hanover, 5-9 septiembre, 2022Editorial
IEEEPalabras clave
Insulated gate bipolar transistors
MOSFET
Silicon carbide
Switching frequency ... [+]
MOSFET
Silicon carbide
Switching frequency ... [+]
Insulated gate bipolar transistors
MOSFET
Silicon carbide
Switching frequency
prototypes
Switches
Silicon [-]
MOSFET
Silicon carbide
Switching frequency
prototypes
Switches
Silicon [-]
Resumen
SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the ... [+]
SiC semiconductors have better characteristics than Si, improving power electronics converters performances. A prototype that can switch semiconductor technology without changing any other part of the system is built and tested, showing the efficiency improvements achieved with SiC. Finally, a theoretical system level converter optimization is done applying the experimental results. [-]
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