Publicado en
IEEE Transactions on Industrial Electronics
Vol. 59, N°3. Pp. 1462-1476, 2012
Palabras clave
Topology
Switching frequency
Insulated gate bipolar transistors
Semiconductor device modeling ... [+]
Topology
Switching frequency
Insulated gate bipolar transistors
Semiconductor device modeling
Junctions
Modulation
Load modeling [-]
Resumen
This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the ... [+]
This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the converters output characteristics such as the output voltage, current, active power, efficiency, etc. Afterwards, the general procedure is applied to compare some of the most relevant converter topologies oriented to a 6.6 kV drive application supplying quadratic torque loads and using 4.5 kV IGBT modules. The paper concludes evaluating the comparison factors of the different converter topologies and selected semiconductors obtained by the proposed procedure. The proposed procedure can potentially be extrapolated to any desired application framework. [-]
