GaN HEMT transistors, with their superior on-resistance and switching times, provide a promising alternative to Si and SiC devices. Commercially available normally OFF GaN transistors can be categorized into two main groups: ...

Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with ...

Insulated gate bipolar transistors (IGBTs) are ubiquitous semiconductor devices used in diverse electronic power applications. The reliability and lifetime assessment of IGBTs is intricate and influenced by different ageing ...